Shape and spatial correlation control of InAs-InAlAs-InP „001... nanostructure superlattices

نویسندگان

  • W. Lei
  • Y. H. Chen
  • P. Jin
  • X. L. Ye
  • Y. L. Wang
  • B. Xu
  • Z. G. Wang
چکیده

The control of shape and spatial correlation of InAs-InAlAs-InP 001 nanostructure superlattices has been realized by changing the As overpressure during the molecular-beam epitaxy MBE growth of InAs layers. InAs quantum wires QWRs are obtained under higher As overpressure 1 10−5 Torr , while elongated InAs quantum dots QDs are formed under lower As overpressure 5 10−6 or 2.5 10−6 Torr . Correspondingly, spatial correlation changes from vertical anti-correlation in QWR superlattices to vertical correlation in QD superlattices, which is well explained by the different alloy phase separation in InAlAs spacer layers triggered by the InAs nanostrcutures. It was observed that the alloy phase separation in QD superlattices could extend a long distance along the growth direction, indicating the vertical correlation of QD superlattices can be kept in a wide range of spacer layer thickness. © 2006 American Institute of Physics. DOI: 10.1063/1.2172288

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Effect of substrate misorientation on the InAs/ InAlAs/ InP nanostructure morphology and lateral composition modulation in the InAlAs matrix

The authors report the self-organized growth of InAs/ InAlAs quantum wires on nominal 001 InP substrate and 001 InP substrates misoriented by 2°, 4°, and 8° towards both −110 and 110 . The influence of substrate misorientation on the structural and optical properties of these InAs/ InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared w...

متن کامل

Emission wavelength engineering of InAs/InP(001) quantum wires

In this work we have studied the dependence of the optical properties of self-assembled InAs quantum wires (QWr) grown on InP(001) on the growth temperature of the InP cap layer, as a mean for controlling the InAs QWr size. Our main result is that we can tune the emission wavelength of InAs QWr either at 1.3 μm or 1.55 μm at room temperature. We suggest that the role of growth temperature is to...

متن کامل

Focused ion beam creation and templating of InAs and InAs/InP nanospikes.

Ion beam irradiation has been examined as a method for creating nanoscale semiconductor pillar and cone structures, but has the drawback of inaccurate nanostructure placement. We report on a method for creating and templating nanoscale InAs spikes by focused ion beam (FIB) irradiation of both homoepitaxial InAs films and heteroepitaxial InAs on InP substrates. These 'nanospikes' are created as ...

متن کامل

Self-assembled InAs quantum wire lasers on „001...InP at 1.6 m

In this work, the authors present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with one and three stacked layers of InAs quantum wires QWRs as active zone and aluminum-free waveguides on 001 InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of InP 5 / GaInAs ...

متن کامل

Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InA...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2006